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    CT-1906

    CT-1906 V1.1 is a 100V, 60A three-phase enhanced gallium nitride half bridge chip, packaged in a 10 × 10mm LGA. This package integrates 6 high-performance HEMT devices and 3 driver chips, making it the most compact and efficient GaN solution in the industry.

    CT10B30V100

    · Bidirectional blocking ability

    · GaN E-type HEMT technology

    · Ultra low on resistance

    CT3601

    The CT3601 is an analog front-end chip with high-precision lithium battery monitoring and all-round safety protection, and low-side NMOS charge/discharge tube drive control, which is suitable for a variety of battery pack applications such as 10-17 strings of ternary lithium or lithium iron phosphate.

    CT3901

    The CT3901 is designed to drive 40V~150V VGaNTM, E-type bidirectional GaN HEMT with a single gate and dual drain for low-voltage side battery protection in BMS systems. With its powerful driving capabilities, the CT3901 can drive multiple VGaNTMs in parallel within 50uSec. The input of the CT3901 is compatible with AFE/MCU logic and can withstand input logic voltages up to 20V. CT3901 is a dedicated driver for CT-UNITE 40V~150V VGaNTM with a gate drive voltage of 5V. The CT3901 has fast opening and closing speeds that respond to fault conditions to protect the system.