Leader in GaN AI ASIC power system chips
Product Center
Zhongke Wireless Semiconductor specializes in AI+compound semiconductor technology, focusing on the design and manufacturing of neuromorphic motion control chips for robots and gallium nitride (GaN) integrated circuits. The company primarily pursues the hardwareization of edge multimodal algorithms, the analogization of AI-side ASIC chips, and the R&D training of VLA physical models. It provides enterprises with comprehensive solutions for edge-side neuromorphic Agent motion control chips. Multiple dexterous hand, motion control, and compound sensor chips have achieved large-scale commercialization. The company holds numerous core invention patents in fields such as physical models, materials, devices, and processes, and has won multiple national awards year after year. It secured second and third prizes in the ICCV international AI competition and claimed the top spot at the CVPR international conference on robotics vision and touch in 2024. Driven by breakthroughs in foundational technologies, the company continuously delivers cutting-edge innovations and achievements.
RMC
An intelligent agent (Agent) ASIC motion control high-performance chip based on a robot model control architecture serves as a bridge connecting AI with the physical world, allowing robots to understand the logic behind the world just like humans.
Agt-ACT
Based on gallium nitride (GaN) integrated circuit technology, it achieves high frequency and high efficiency, high power density, low temperature rise, and rapid response, with a junction temperature reaching up to 225 °C. The intelligent joint chip has a built-in FOC algorithm, enabling robot actuators to develop towards lightweight and standardized designs, while addressing long-standing industry challenges in robot joints such as overheating, short battery life, slow response, and bulkiness.
RDP
Gallium Nitride (GaN) low-impedance, high electron mobility gallium integrated circuit 'digital power chip solution,' with built-in high-precision SOC, SOH, SOP AI electron mobility estimation algorithms. It is mainly used in aerospace, space robotics, smart equipment, digital inverters, new energy vehicles, new energy battery BMS management, safe charging, and other scenarios.
RDL
Gallium Nitride (GaN) millimeter-wave and millimeter-wave high electron mobility (PHEMT) amplifier and Transceiver chip solutions, mainly used in applications such as drones, robots, intelligent equipment, air-to-ground communication, space networking, and electronic countermeasures in complex electromagnetic environments.
News
Latest updates on products, markets, and events.
New Breakthrough in Gallium Nitride Technology: Do…
China's 15th Five Year Plan has made clear arrangements for key industries such as integrated circuits, intelligent robots, and wide bandgap se…
China's First Humanoid Robot Joint GaN Magnetic En…
Recently, Zhongke Semiconductor officially released the first gallium nitride (GaN) magnetic encoder sensor for humanoid robot joints in China. Rel…
China's first domestically produced GaN magnetic e…
Recently, Zhongke Wireless Semiconductor officially launched the CT-21X Gallium Nitride (GaN) magnetic encoder sensor, which is China's first d…
Global Humanoid Robot Race: China's GaN Chips Catc…
Humanoid robots, as the core carrier of next-generation universal intelligent terminals and embodied intelligence, are gradually becoming a strateg…
About Us
ZK Wireless Semiconductor, founded by an alumni team from the University of Science and Technology of China, consists of 7 professors and 11 PhD holders. It has extensive experience in the research and development of motion control analog computing chips and the industrialization of gallium integrated circuits, and has launched the world's first robot power system chip.
Company Overview
The Zhongke Wireless Semiconductor Team was established in Hefei in 2011 and relocated to Shenzhen, Guangdong in 2018. Founded by alumni of the University of Science and Technology of China, the team consists of experts and doctoral supervisors in the field of analog chip design for "third-generation semiconductors," including 7 professors and 11 PhDs. They have secured 43 patents in both military and civilian sectors and published 250 papers in total. The team originated from the Institute of Semiconductors at the Chinese Academy of Sciences, boasting extensive experience in the R&D and industrialization of compound power semiconductors. Their chip developments include HEMT, PHEMT, GaN/SiC, transceiver communication chips, mini LED, micro LED, compound semiconductor epitaxial material research, and the development of sapphire substrate technology for alumina (Al2O3) material growth. Their products are primarily applied in new energy, drones, unmanned equipment, IoT, display panels, and fast charging sectors.
Read detailDevelopment history
In 2023, gallium arsenide/gallium nitride HEMT/PHEMT, GaN epitaxy will enter the mass production stage; In 2023, the MiniLED 8-channel chip was verified to be qualified; Develop 48 channel chips; In 2022, SiP process design and mass production of IoT chips and SiP packaging machine image SOC+RFTransceiver will be achieved; Developing photonic microwave connectors in 2019.
Read detailCompany honors
The company is qualified as a national high-tech enterprise and a national software enterprise. Obtained 100 patents, 9 software copyrights, police probes, transparent algorithm encryption systems, etc., and received government funding (5 million yuan). Awarded as a member of the China Semiconductor Alliance and a partner of Huawei's 4G Smart Antenna and China Mobile's 5G Joint Innovation Center.
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